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Power Diode Structure
- It has heavily doped n+ region, lightly doped n- region and heavily doped p+ region.
- The n- layer is known as drift region. This layer is not available in low power diodes.
- The drift region determines the reverse breakdown voltage of the diode. Its function is to absorb the depletion layer of the reverse biased p+n- junction.
- As it is lightly doped, it will add significant ohmic resistance to the diode when it is forward biased. Thus increase in power dissipation of the device.